| 摘要 |
A method for growing a thin and flat ribbon-like crystal of crystalline substance, wherein a seed crystal is contacted with horizontal free surface of melt of crystalline substance raised up to the level beyond the upper edge of a crucible, thereafter the contact interface between said seed crystal or a successively growing crystal and the melt (the solid-liquid interface) is cooled under freezing point of said crystalline substance, thereby the crystal is made to successively grow on said solid-liquid interface, while said seed crystal and said successively growing crystal is drawn out substantially in horizontal direction, wherein an outwardly projecting eaves-structure is formed on at least a part of an upper peripheral wall of said crucible, said melt of crystalline substance is guided to said eaves-structure, which is then heated, thereby the generation of recrystallization on upper face of the melt contacting with the upper portion of the peripheral wall of the crucible is prevented, and high cooling effect for the solid-liquid interface can be retained as well.
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