发明名称 VESSEL FOR HIGH FREQUENCY TRANSISTOR
摘要 PURPOSE:To simplify manufacturing steps and to reduce the cost by electrically separately crossing the crossing of the electric connection of a metallized surface mounting a transistor chip to an external terminal and a grounded metallized surface by a bridge, and connecting one grounded fine metal wiring of the chip to the grounded metallized surface. CONSTITUTION:A transistor chip 11 is mounted on a collector metallized surface 9 connected to an output terminal 3 on an insulating substrate 1. An input terminal 2 is bonded to a metallized surface 4, and wired through fine metal wirings 13 to the chip 11. The partial grounded metallized surfaces 6a, 6b are connected to the grounded surface on the lower surface of the substrate 1 through side metallized faces 7a, 7b. A metallized surface 10 is electrically connected by bridges 14a, 14b independently from the surfaces 6a, 6b. The chip 11 is grounded by fine metal wirings 12a, 12b to an input grounded metallized surface 5 grounded by metallized sides 8a, 8b and by the wirings 12a, 12b to the grounded surface 10.
申请公布号 JPS63239847(A) 申请公布日期 1988.10.05
申请号 JP19870126619 申请日期 1987.05.22
申请人 NEC CORP 发明人 WAKAMATSU SHIGEMI
分类号 H01L23/04;H01L21/60;H01L23/02 主分类号 H01L23/04
代理机构 代理人
主权项
地址