| 摘要 |
PURPOSE:To improve the quality of a close contact type line sensor by providing the photodetection windows at parts except the endmost parts of nether electrodes, then, obtaining uniform area between respective photodetection windows. CONSTITUTION:After nether electrodes 5 and a metallic conductor electrodes 7 are formed by photoetching, the photodetection-window formation parts of the metallic conductor electrodes 7 are removed by photoetching to form photodetection windows 5a. Thus, the photodetection windows 5a are formed leaving some part 7a of the endmost part of each metallic conductor electrode 7 at the photodetection side end part of each nether electrode 5, and then the influence of variance of etching at the metallic conductor electrode tip parts is eliminated, obtaining the high-precision photodetection windows 5a. |
