发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To almost perfectly intercept light even if external light is applied to the substrate surface, by forming the second metallic layer in the opening section of the first metallic layer. CONSTITUTION:An Al 19 is provided on a substrate 18 to etch the Al by applying an electron-beam resist mask to the Al. Then the second Al 21 is formed, and the resist mask 20 is removed. With said constitution applied to an IC for liquid crystal display panel, the second Al layer closes the gap of the first Al wiring 29 for shade, therefore light will not reach the semiconductor substrate. Accordingly, no light leakage current will be created. In addition, by said constitution, a new photoetching process is unnecessary for the pattern formation of the second metallic layer, therefore high yield and low cost will be materialized.</p>
申请公布号 JPS5731158(A) 申请公布日期 1982.02.19
申请号 JP19800106089 申请日期 1980.08.01
申请人 SUWA SEIKOSHA KK 发明人 OOSHIMA HIROYUKI
分类号 G02F1/136;G02F1/1368;G09F9/30;G09F9/35;H01L21/3205;H04N5/30;H04N5/335;H04N5/357;H04N5/369;H04N5/374 主分类号 G02F1/136
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