发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To intercept external light, by burying the second metallic layer in the interlayer insulating layer between a poly Si layer and the first metallic layer. CONSTITUTION:PSG24 is stacked on a conductive poly Si layer 22 in an IC device for liquid crystal panel as an interlayer insulating film for the first layer, and a connecting hole is made. Next, Al 25 is made at the place except the vicinity of the hole for shade and the hole is again opened by stacking PSG26. Al video signal wiring 27 and a liquid crystal driving electrode 28 are formed on the PSG26. By said constitution, even if the light applied to the surface leaks from the opening section 29 of Al wiring 27, 28, the light is intercepted by a buried Al layer 25 and does not reach a semiconductor substrate 18. Therefore, no light leakage current is generated, and a normal picture will be displayed.</p>
申请公布号 JPS5731159(A) 申请公布日期 1982.02.19
申请号 JP19800106090 申请日期 1980.08.01
申请人 SUWA SEIKOSHA KK 发明人 OOSHIMA HIROYUKI
分类号 G02F1/136;G02F1/1368;G09F9/30;G09F9/35;H01L21/3205;H01L23/52;H04N5/30;H04N5/335;H04N5/357;H04N5/369;H04N5/374 主分类号 G02F1/136
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