| 摘要 |
PURPOSE:To widening the initial conductive region of a thyristor and to improve the di/dt withstand amount by engaging the n type emitter layer of an auxiliary thyristor region in pectinated form with a gate electrode. CONSTITUTION:A gate electrode 7 and the n type emitter layer 41 of the first auxiliary thyristor region as well as the first auxiliary electrode 61 and the gate electrode 7 are concentrically engaged pectinatedly. The n type emitter layer of the first auxiliary thyristor does not exist under the outside part of the first auxiliary electrode 61. An n type conductive layer 8 is formed to avoid to increase the reactive part in which the third auxiliary thyristor is not fired due to the flow of large current to the outside part of the first auxiliary electrode 61 from the gate electrode 7 as a gate current. Since the layer 41 of the first auxiliary thyristor is surrounded by the gate electrode 7 from both inner and outer peripheral sides, the region in which a current is concentrated due to initial conduction is increased in the first auxiliary thyristor. |
