| 摘要 |
<p>PURPOSE:To completely eliminate an optical leakage current in a semiconductor device by forming a metallic layer on the overall surface of the device to approximately completely shield the light, and thus reducing the light reaching the interior of a semiconductor substrate even if the external light is emitted to the surface of a semiconductor integrated circuit to the possible minimum. CONSTITUTION:An aluminum layer 19 is formed on a substrate 18, and is removed at the unnecessary parts in accordance with the pattern of a resist 20. Subsequently, the pattern edge of the aluminum is oxidized by an anodic oxidization method or the like to form an oxidized aluminum layer 21. Then, the second metallic layer 22 is formed on the overall surface, and the resist 30 is removed by a lift-off method. Since alumina is interposed as an insulator between the metallic layers 19 and 22 in this manner, no shortcircuit occurs between wires, but a structure in which the metallic layer is covered on the overall surface of the semiconductor device can be obtained.</p> |
