| 摘要 |
PURPOSE:To improve the characteristics of a semiconductor device by oxidizing with plasma a conductor metallic film formed on a substrate to form an insulating film and forming a capacitor with the film as a derivative. CONSTITUTION:Boron ions are injected on a P type silicon semiconductor substrate 1 to form a P<+> type channel cut region 2 and a field insulating film 3, a tantalum film 4 is formed over the entire surface of the substrate, an insulating film 5 made of oxidized tantalum is formed of the tantalum film by a plasma oxidation apparatus, a polycrystalline silicon layer 6 is formed on the film by a chemical vapor phase growing method, is then patterned by a photolithographic technique to form a capacitor section Cp, and thereafter a gate electrode 8, a source region 9 and a drain region 10, etc. are formed in the step of manufacturing an n-channal MIS field effect transistor. In this manner, it does not include moisture or molten liquid content, the characteristics of the device are not deteriorated. |
