| 摘要 |
PURPOSE:To increase the incident light effective utility rate of a Schottky type photodetector and to improve the optical sensitivity of the photodetector by partly removing a photodetecting metallic film and forming a guard ring region on the periphery of the film. CONSTITUTION:A photodetecting metallic film 24 is partly removed, and a part in which incident light 29 reaches via the film 24 a semiconductor layer 22 and a part in which the light reaches directly the layer 22 are formed. In order to further prevent the decrease in the characteristics due to the leakage current produced between the periphery of the film 24 and the surface of the layero 22, P type region and N type region are respectively formed on the guard ring region 23 (on N type semiconductor substrate and P type semiconductor substrate) at the periphery of the film 14. |
