| 摘要 |
PURPOSE:To obtain a semiconductor hybrid single crystal layer having the desired composition ratio by a method wherein ions of the III group or the V group element are implanted in the desired region of the III-V group semiconductor hybrid crystal layer formed by molecular beam epitaxy on a substrate, and moreover a molecular beam of the V group is irradiated thereon, and annealing is performed to convert it into single crystal. CONSTITUTION:An AlyGa1-yAs layer 2, a GaAs layer 3 are formed by molecular beam epitaxy on the GaAs substrate 1. When Al is introduced in the desired region by ion implantation irradiating the whole surface of the GaAs layer 3 with a molecular beam of As, although a part of As and Ga in the neighborhood of the surface are repelled out by impact of Al ions, because As are supplemented with the moleular beam, Al ions enter the places where Ga go out to form an AlxGa1-xAs layer 19. Then heat treatment is performed irradiating with the molecular beam of As to anneal the layer 19 to convert into single crystal. Accordingly semiconductor hybrid single crystal multiple layer structure having the desired composition ratio can be formed easily. |
