| 摘要 |
PURPOSE:To enable one-cell one-transistor system in a semiconductor nonvolatile memory by connecting the source and P-N junction terminals of respective floating type memory cells belonging to the same longitudinal row to respective common lines and constructing to connect the respective connecting wires via switches to longitudinally selected wires. CONSTITUTION:Memory cells MC arranged laterally and longitudinally are formed of control gate 1, floating gate 2, source 3 and drain 4 in a transistor and of P-N junction 6. The drains of the respective cells MC belonging to the same lateral column are connected to a common Y-selecting wire. The sources 3 of the respective cells MC and the anodes 5 of the P-N junctions 6 belonging to the same longitudinal row are connected to the common reading column wire R and the common wiring column wire W, and the respective wires R, W are connected via transistors 9, 8 to X-selecting wire. At the reading time, control signal and inverting R/W are set at H and at the writing time, the control signal R/W is set at H, and a selection signal is applied to the X, Y selection wires. |
