| 摘要 |
PURPOSE:To reduce the density of the defects in the crystal of a semiconductor device by growing a semiconductor layer on an insulating substrate, injecting ions on the semiconductor layer to convert the deep part into amorphous state while maintaining the surface of the semiconductor layer in crystalline state and further heat- treating it. CONSTITUTION:A crystalline silicon layer 2 is grown on a single crystalline sapphire substrate 1. then, silicon ions are injected on the layer 2. The surface of the layer 2 remains crystal of high quality, and the deep part becomes amorphous silicon 3. Thereafter, it is heat treated in N2 gas atmosphere to form a crystalline layer 2' having excellent crystallinity. Subsequently, a silicon layer region 4 is formed, a p type region 5 and an n type region 6 are then formed to form a diode of p-n junction. Then, a p<+> type region 7 and an n<+> type region 8 are formed. |
