| 摘要 |
PURPOSE:To eliminate variabilities between insulated gate type field effect transistors by determining the length of an off-set gate (OG) region in its channel direction by self-alignment with respect to the gate. CONSTITUTION:With gate 45 and insulating film 42 as impurity selecting masks off-set gate regions 50, 51 are formed. At this time the region 50 is self-aligned with respect to a gate 45 and a drain region 47. The drain region 47 is self-aligned with respect to the gate 45, and accordingly the length of the off-set gate region 50 in its channel direction is self-aligned with respect to the gate 45. Similarly, the length of the off-set gate region 51 in its channel direction is self-aligned with respect to the gate 45. |
