| 摘要 |
PURPOSE:To simplify the diffusion process for the subject semiconductor device by a method wherein the impurity layer of high density is formed in the vicinity of the surface and the impurity layer of low density is formed at the deep section simultaneously by diffusing Zn through the intermediary of an insulating thin film of the prescribed thickness formed on a III-V group compound semiconductor. CONSTITUTION:An SiO2 mask layer 12 of 4,000Angstrom is formed and an aperture is provided on an N type GaAs substrate 11. On the surface of the exposed substrate with the aperture, an SiO2 film 13 of the thickness of 100-350Angstrom is formed. This wafer is put in the quartz ample containing a ZnAs2+As and a heat treatment is performed at the temperature of 800 deg.C for three hours. As a result, the Zn is diffused in the substrate 11 through an SiO2 thin film 13 and the Zn diffusion layer having a P<+> type high density diffusion layer 14 is formed in the section close to the surface and a P type low density diffusion layer 15 is formed in the deep section. Through these procedures, the process of diffusion is simplified and a semiconductor laser having a stabilized lateral mode can be obtained. |
