| 摘要 |
PURPOSE:To form a microminiature gate electrode and to reduce the leakage current of a semiconductor device by forming an electrode on an active layer, forming a mask covering the channel region of the active layer and mesa etching the active layer with the mask and the electrode as a mask. CONSTITUTION:High resistance GaAs buffer layer 12, N type GaAs active layer 13 and source and drain electrodes 14, 15 of the predetermined shape with metallic films are formed on a GaAs substrate 11 in the step (A). Then, a mask 18 of photoresist film is so formed as to cover the channel region of the layer 13, with the mask 18 and electrodes 14, 15 as masks the layer 13 is mesa etched, the end 13A covered with the mask 18 is formed in mesa shape, and the periphery covered with the electrodes 14, 15 is formed in recess shape in the step (B). After the mask 18 is removed, a Schottky barrier gate electrode 16 is formed with aluminum film to form a reinforcing electrode layer 19 by a gold plating in the step (D). |
