| 摘要 |
Disclosed herein is a method for making electrically conductive penetrations into thin films and equivalent. The penetrations reach from the outside surface of the thin films to be grown by means of depostion as layers at a temperature of 200 DEG to 700 DEG C. to an interior electrode layer. According to the method a desired quantity of a metallic substance whose melting point is lower and boiling point higher than the growing temperature of the thin film layers is placed on the interior electrode layer within each desired penetration area before the preparation of the following layer. Hereby the metallic substance, when being molten, prevents the formation of layers in the area above itself and, when hardening, forms the desired electrically conductive penetrations. |
