| 摘要 |
PURPOSE:To acquire a uniform Al diffusion layer with high concentration by setting up an Al-Si layer on an Si substrate to be heted. CONSTITUTION:The surface of an Si substrate is fully cleansed to be coated with an Al-Si film to about 500-5,000Angstrom thickness by vacuum evaporation and deposition with full attention to the atmospheric gas condition and the heating condition to perform photographic etching. With subsequent heat treatment the Al-Si of already uniform composition becomes a diffusion source and forms a junction with the uniform impurity concentration without generating a region of partially high concentration contrary to the case of vapor depositon of Al laryer, whereby the diffusion layer can be easily controlled and a minute pattern can be also formed. |
