| 摘要 |
A semiconductor device in which gates are formed in V-shaped grooves formed in a semiconductor bulk, which device has VMIS transistors for storing information by inserting or removing electric charges that are stored in junction capacitances in regions that are embedded in the vicinity of the tips of the V-shaped grooves. The feature of the semiconductor device resides in that the capacitor region, consisting of an embedded layer of capacitors distributed over a large area, is divided by the tips of the plurality of V-shaped grooves.
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