发明名称 LIQUID PHASE EPITAXIAL GROWTH
摘要 PURPOSE:To obtain a liquid phase epitaxial layer with even film thickness by keeping the interval between two pieces of substrates at a constant value less than 6mm. to inject a melted substance thereinto. CONSTITUTION:A board having a fixed part 1 and a sliding part 2 is arranged inside of a growth tube. The fixed part 1 is provided with an inner chamber 4 having an injection port 3 of a melted substance and the upper and lower surfaces are furnished with two pieces of substrates 5. The sliding part 2 has an injection port 6 of the melted substance whereby through sliding a stopper 8 presses down a weight 7 to inject the melted substance into the inner chamber. Thereby when the interval between the substrates are held within 6mm. for making epitaxial growth, the epitaxially grown thin films on the upper and lower surfaces have the extremely slight fluctuation in film thickness thus to obtain an even film with good reproducibility.
申请公布号 JPS5728324(A) 申请公布日期 1982.02.16
申请号 JP19800103030 申请日期 1980.07.29
申请人 FUJITSU LTD 发明人 SHIMA KATSUTO;SEKI KATSUJI
分类号 H01L21/208;C30B19/06;(IPC1-7):01L21/208 主分类号 H01L21/208
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