| 摘要 |
PURPOSE:To make current amplifying rates of respective N-P-N transistors, in an 1<2>L element provided with a plurality of collectors formed on an N-P-N transistor, equall to each other, by a method wherein the depth of a base diffused layer is so determined that the closer to an injector, the deeper the base diffused layer regions. CONSTITUTION:In a diffusion process of a base layer of an 1<2>L, wherein the base region of a vertical type N-P-N transistor and the emitter of a horizontal type P-N-P transistor are made common to each other, windows are formed in an oxide film 1 to diffuse a P type impurity, for example, B. When the windows are photo-etched, the oxide film 1 on an injector region 13 and the base region 11 closer to the injector is completely removed, and a thin oxide film 12 is left in the region remote from the injector. Thereby, the junction depth of a base diffused layer 14 close to the injector is formed deeper than that of a remote region 15, so that, the base resistance of said region decreeses. Accordingly, the current amplifying rates of a plurality of emitters are made equall to each other. |
