发明名称 DISCHARGE DEVICE AND METHOD FOR USE IN PROCESSING SEMICONDUCTOR DEVICES
摘要 <p>The present invention relates to an apparatus and method for making electrical connections between a conductive region through an insulating layer and more particularly to a method for use in the manufacture of semiconductor devices which prevents charge accumulation during exposure by a charged beam.</p>
申请公布号 CA1118535(A) 申请公布日期 1982.02.16
申请号 CA19780312138 申请日期 1978.09.26
申请人 FUJITSU LIMITED 发明人 ZASIO, JOHN J.;SAMUELS, MICHAEL W.
分类号 H01L21/027;(IPC1-7):H01L21/44 主分类号 H01L21/027
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