| 摘要 |
PURPOSE:To eliminate characteristic deterioration at a light emitting unit disposed near the edge of a light emitting diode array by forming the vicinity of the unit in a mirror-surface by a natural cleavage, not forming a scribing line only at the vicinity of the unit to obtain it, and forming a film and a recess at the vicinity of the unit to fly a scribing stylus. CONSTITUTION:Light emitting units 2, 2,... are aligned in one row by a selectively diffusing method on the surface of the grown layer of a compound semiconductor substrate 1 on which GaAsP is epitaxially grown on GaAs. Individual electrodes 3, 3,... for supplying power to the units 2, 2,... are provided through an insulating film 4, and a common electrode 5 is formed substantially on the whole rear surface. The sidewalls 6 parallel to the array of the units 2, 2,... is obtained by a scribing method or a dicing method. Thus, the sidewall exhibits a surface like a fine mirror assembly or a rough surface, but the sidewall 7 disposed on the extension of the aligning direction of the units 2, 2,... exhibits a surface like a fine mirror assembly, but a mirror-surface natural cleavage surface 8 due to absence of scribing line due to a scribing stylus is obtained near the unit 2. |
