| 摘要 |
PURPOSE:To uniformalize light emitting, and to improve light emitting efficiency by a method wherein a P electrode is formed on a semiconductor substrate with a NP junction, the whole surface containing the electrode is coated with an insulating film, a metallic film having excellent adhesive property with a gold plating layer is shaped on the film, a hole is made and the P electrode is exposed and the electrode and the insulating film are coated with a gold plating layer. CONSTITUTION:When the P electrode 24 and N electrode 23 are attached to the semiconductor light emitting device 20 in which the PN junction is formed by an N type window layer 21 and a P type light confining layer 22, the fitting is conducted as follows. That is, the P electrode 24 is shaped on the back of the layer 22, the whole surface containing the electrode is coated with the insulating film 25, the insulating film is coated with the Cr film 26 having excellent adhesive property with the gold plating layer, the opening is bored corresponding to the P electrode 24, and the Au plating layer 27 contacting with the P electrode 24 is coated being extended on the film 26. The electrodes 23 are attached around the layer 21. Accordingly, Cr in the film 26 does not intrude to the P electrode 24 consisting of Ga-Al-As-Au- Zn, and uneven light emitting can be prevented. |
