| 摘要 |
PURPOSE:To steadily form a functional deposited film with high efficiency by introducing a microwave into the plasma chamber of a cavity resonator structure, and generating separately the active species of the plural kinds of raw gases separated and supplied by a gas separation membrane with plasma. CONSTITUTION:The film depositing device provided with an exhaust port 107 is separated into the plasma chamber 101 and a film forming chamber 102 by a microwave reflecting plate 103 having many pores. The plasma chamber 101 is further separated into chambers (a) and (b) by the gas separation membrane 111 transmitting the microwave, and the raw gases A and B are respectively introduced from gas inlets 106a and 106b. The microwave is then introduced into the plasma chamber 101 from an inlet window 104 through a waveguide 105. As a result, the raw gases A and B are formed into plasma, and the active species A and B are respectively generated in the chambers (a) and (b). The active species A and B flow into the film forming chamber 102 through the pores of the microwave reflecting plate 103. The species react with each other, and a functional deposited film is formed on a substrate 108 on the holder 109 kept at a specified temp. by a heater 110. |
