| 摘要 |
PURPOSE:To complete the confining of carriers and light by a method wherein a layer, band gap energy thereof is the same as or smaller than an active layer, and a layer, energy thereof is larger than the active layer, are laminated, a groove section is formed to the layers, and the active layer functioning as a light emitting section is grown in the groove section. CONSTITUTION:The n type GaAlAs layer 13, the p type GaAlAs layer 14 and the n type or p type GaAs layer 15 are laminated on a GaAs substrate 12 and grown in epitaxial shapes, and the groove section 20 intruding into the substrate 12 is bored at the central section. n Type GaAlAs layers 16', 16 are grown simultaneously on a bottom surface of the groove section 20 and the layer 15, and the p type or n type GaAlAs layers 17', 17, the active layers, are grown on the layers 16', 16 when the layer 16' grows up to half a side surface of the layer 14. The central section of the layer 17' is grown in a convex lenticular shape at that time, a refractive index of the central section is made larger than the surroundings, a P type GaAlAs layer 18 is grown on the whole surface so that the surface is flatted while burying the groove section 20, a p type GaAs layer 19 for an ohmic contact is coated. |
