| 摘要 |
PURPOSE:To improve the static electrical break-down strength of a resistor by not forming a reverse-conductin type buried layer in the lower part of a contact region directly connected to an outer terminal in the diffused resistor of the same conductiveity type as a substrate, which is formed in an epitaxial layer. CONSTITUTION:For example, an N<+> type buried layer 4 s formed on a P type substrate to form an N type epitaxial layer 2. Then an element is formed in the island region separated by an insulated layer 9 to form a circuit. When a resistor consisting of a P type diffused layer 3 is to be provided in the epitaxial layer 2, for the resistor 3 connected to an outside terminal 8, buried layer 4 is not formed (a part or the whole thereof is removed) below the contact 6 on the side of the outside terminal 8. Thus it is possible to obtain the substantially same effect as obtained by forming the epitaxial layer 2 thickly. Accordingly, the static bread-through strength can be improved. |
