| 发明名称 |
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE |
| 摘要 |
<p>26.7.78 1 PHN 8870 "Method of manufacuring a semiconductor device A method of manufacturing LOCOS transistors in which base doping, emitter doping and emitter metallization are provided via the same aperture. Problems at the edge of the sunken oxide are eliminated so that the channel stopper diffusion in the epitaxial layer may be omitted, which presents advantages in particular in I2L.</p> |
| 申请公布号 |
CA1118532(A) |
申请公布日期 |
1982.02.16 |
| 申请号 |
CA19780309394 |
申请日期 |
1978.08.15 |
| 申请人 |
N.V. PHILIPS'GLOEILAMPENFABRIEKEN |
发明人 |
VAN GILS, JOHANNES A.A. |
| 分类号 |
H01L21/32;H01L21/331;H01L21/762;H01L21/8226;H01L27/02;H01L27/082;H01L29/10;H01L29/73;(IPC1-7):H01L21/36 |
主分类号 |
H01L21/32 |
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