| 摘要 |
PURPOSE:To make the bonding on resin films highly reliable, by forming a metal pattern having the surroundings covered with the second polyimide film on the first polyimide film on a metal layer, and forming a pad metal on the metal pattern through a polycrystalline Si layer. CONSTITUTION:For example, on a substrate 1 having an Al wiring 2 of the first layer, liquid polyimide is applied, heat-treated and hardened to form a first polyimide resin film 3. An Al pattern 14 of the second layer is formed on the pad, and then polyimide is applied to the pad. This is prebaked at about 90 deg.C, and the opening connected to the Al pattern 14 is formed by photoetching. After this has been hardened and baked (300-500 deg.C), a polycrystalline Si layer 7 and an Al layer 8 are formed and heat-treated to obtain ohmic contacts. Subsequently, a wire 9 is bonded to the Al film 8. Thus, the second Al layer 14 can be bonded onto the resin films 3, 5. Because they are alloyed with the upper Al film 8 and the polycrystalline Si layer, separation or the like can be prevented after bonding. |
