| 摘要 |
PURPOSE:To obtain the device emitting light at the substrate side while eliminating the need for a buffer layer, and to simplify structure by a method wherein the surface of the substrate is etched, and a direct carrier confining layer, an energy gap thereof is larger than the substrate, is grown on the surface. CONSTITUTION:When the carrier confining layer is grown in an epitaxial shape through a gaseous-phase reaction, HCl gas is worked on the surface of the N type GaAs substrate 1 first and the surface is etched, and a surface transforming layer generated during heating in a reaction chamber is removed previously. The gas is changed into H2, AsCl3, AlCl3, etc., and the P type CaAlAs carrier confining layer 3 is grown on the exposed surface 2. When the confining layer is grown in a liquid phase, a Ga solution in which N type GaAs is saturated is worked to the substrate 1, a transformed layer formed on the surface is melted back, the solution is changed into a Ga solution in which P type GaAlAs is supersaturated, and the P type GaAl As layer 3 is grown. An electrode 4 is attached to one part of the surface of the layer 3 and an electrode 5 collectively to the back of the substrate 1 respectively. |
