| 摘要 |
<p>PURPOSE:To decrease optical leakage currents by making the area ratio of the overlapping sections of a region, in which polycrystal Si is removed, and a region, in which Al is removed, of the semiconductor device, in which Al is attached on the polycrystal Si patterned through an insulating film, to predetermined value or lower. CONSTITUTION:Prescribed conduction type regions 11 are formed to a Si substrate 8, the polycrystal Si layer 13 is shaped on the semiconductor substrate containing a field oxide film 9 and patterned, Al or Al alloy layers 15, 16 are molded through a layer insulating film 14 and patterned, and the area ratio of the overlapping sections of the region, in which the polycrystal Si is removed, and the region, in which the Al or Al alloy layers are removed, is made 30% or lower of total area. Accordingly, the optical leakage currents can be decreased by 30-40% when the device is used for a drive circuit, etc. of a liquid crystal annunciator, etc.</p> |
