VAPOR GROWTH DEVICE OF COMPOUND SEMICONDUCTOR

摘要

PURPOSE:To perform easily crystal growth of a compound semiconductor having radical change of composition by a method wherein a disk type supporting tool is arranged in a slit provided in a dashboard dividing a vapor growth reaction chamber into two, and the supporting tool is made to rotate transfer a substrate fixed on the supporting tool between the respective reaction chambers. CONSTITUTION:The vapor growth reaction chamber in a reaction tube is divided into two by the dashboard 9, and the disk type supporting tool 11 is arranged in the slit 10 provided in the dashboard 9. The supporting tool 11 is made to rotate by an operation bar 14 connected to the supporting tool 11 through a guide sleeve 13. Therefore the semiconductor substrate 12 fixed to the supporting tool 11 transfers in an extremely short time between the respective vapor growth reaction chambers flowing respectively material gas having different composition with each other. Accordingly crystal growth having radical change of composition can be performed easily.