| 摘要 |
PURPOSE:To increase a transfer speed by constituting a gate electrode by a plurality of electrode parts. CONSTITUTION:An N type epitaxial layer 2 is formed on a semi-insulating semiconductor substrate 1, a source electrode 3 and a drain electrode 4 are attached to both ends of said epitaxial growth layer 2 so as to form ohmic contact, and the gate electrode 5 is further provided. Said gate electrode 5 is constituted by a plurality of electrode parts 21, which are sequentially arranged along a wire 7 with an interval L being provided, and which form Schottky junction 20. The plurality of the electrode parts 21 are connected by a linking means such as a wire 22 one another. |
