| 摘要 |
PURPOSE:To obtain an Mo pattern of high quality by a method wherein Mo is adhered on an Si substrate, and thus obtained Mo substrate is heat treated, etc., to form Mo oxide thereon, and chloromethylated polystyrene is applied thereon to form a resist pattern, and uniform and rapid etching is performed. CONSTITUTION:After Mo is adhered on the Si wafer by electron beam evaporation, heat treatment is performed to form the Mo oxide. Chloromethylated polystyrene (CMS) is applied thereon to form the resist pattern, and etching is performed. Accordingly generation of degenerated layer to be generated by Mo and CMS is avoided, and uniform etching is performed to form the favorable Mo pattern. |
