| 摘要 |
PURPOSE:To obtain a dielectric multilayer mirror having a high reflection factor and a wide reflected wave length area, by a few layers, by preparing a layer having a low refractive index, by use of SiO2, and preparing a layer having a high refractive index, by use of amorphous Si(a-Si). CONSTITUTION:A dielectric multilayer mirror consisting of 4 dielectric layers is obtained by forming alternately a dielectric layer 21 having a low refractive index, consisting of SiO2, and a dielectric layer 22 having a high refractive index, consisting of a-Si, which has been prepared under the vacuum condition for forming an amorphous a-Si layer having a high refractive index, on a GaAs substrate 3. |
