| 摘要 |
PURPOSE:To prevent the formation of an abnormal projecting bump electrode in a fringe section of a semiconductor substrate by selectively shaping an ohmic metallic layer only on a semiconductor element at a central section except a semiconductor element within a range of predetermined dimensions from the fringe section of the semiconductor substrate. CONSTITUTION:Gold is evaporated on the whole surface of the back of the semiconductor substrate 10 and an ohmic metallic layer 6 is formed, the ohmic metallic layer 7 is shaped on the whole surface of a residual section except a range l of predetermined dimensions from the fringe section of the semiconductor substrate 10, the ohmic metallic layers 7 on insulating films 5 are wiped off by utilizing a fact that adhesive force between the gold of the ohmic metallic layers 7 and the silicon of P type regions 3 is particularly larger than adhesive force between gold and the insulating films 5, the ohmic metallic layer 6 on the back is plated with silver, and the bump electrodes 9(9a-9f) are formed on the surface by means of a jet type plating device. Accordingly, the bump electrodes do not enlarge because only small currents flow to the fringe section. |
