| 摘要 |
PURPOSE:To provide oscillating wavelength in a visible range capable of continuously oscillating at ambient temperature by forming an active layer of upper and lower enclosure layers and specific 5-component or 4-component mixed crystal having crystalline orientation of the same lattice constant as the GaAs. CONSTITUTION:An N type GaAs buffer layer 22, an N type Al0.23Ga0.32In0.45P clad layer, an Al0.15Ga0.40In0.45P active layer 24, a P type Al0.23Ga0.32In0.45P clad layer 25 are laminated on an N type GaAs substrate 21 to form a main part of a semiconductor laser. With this configuration a striped structure electrode configuration and light resonator configuration are provided, thereby producing oscillating wavelength of approx. 650mum, and obtaining a semiconductor laser capable of oscillating continuously at ambient temperature. The similar effect can also be obtained by employing AlGaInPAs-component mixed crystal which is substituted for As at the part of the P of the AlGaInP-component mixed crystal. |
