| 摘要 |
PURPOSE:To obtain a semiconductor having strain of intermediate structure between crystal and amorphous, 10<-6>-10<-4>cm<-1> of dark conductivity of true semiconductor and 0.1-5mol% of H or halogen element to neutralize unpaird bond in the semiconductor by a thermal decomposition method due to glow discharge of SiH4. CONSTITUTION:When SiH4 is diluted with He, is glow discharged at 0.001- 10 Torr, its substrate is maintained at 400-600 deg.C and crystal is grown while emitting instantaneous light by Xenon lamp or the like, semiamorphous Si(SAS) of lattice strain of intermediate structure between crystal and amorphous can be obtained. When 0.1-5mol% of neutralizing H2 of halogen element is added thereto to neutralize the residual unpaird bond at the time of forming the SAS, the electric conductivity can be set at approx. 10<-6>-10<-4>cm<-1> in the true state. When Si3N4-x(0<x<4), SiO2-x(0<x<2) and SiCx(0<x<1) of prescribed compositions are simultaneously formed in the film, their energy band widths can be increased, the crystalline structure becomes near the single crystal, and its carrier diffusion reaches 0.5-100mum, and its photoelectric conversion efficiency is increased in a semiconductor film. |
