| 摘要 |
PURPOSE:To increase the molybdenum etching speed to a practical level by exposing a molybdenum surface to be etched to plasma of a mixed gas of CCl4 and oxygen. CONSTITUTION:For example, when a semiconductor device having direct contact is manufactured using molybdenum as a gate 13 of a field effect type transistor, the molybdenum surface is exposed to plasma of a mixed gas of CCl4 and oxygen. The amount of CCl4 mixed with oxygen is adjusted to about 10-30%. As a result, the molybdenum 13 alone is etched selectively, and silicon oxide 12 under the molybdenum 13 and substrate silicon 11 of the direct contact part are not etched. Thus, the molybdenum 13 alone can be worked into an arbitrary shape. |
