| 摘要 |
PURPOSE:To enable to reduce the length of one bit while increasing the lateral width of a transfer unit relatively by forming the entirely in a zigzag transfer structure without providing an isolation region between the respective transfer units. CONSTITUTION:The first region having a plurality of the first storage units phi1S, a plurality of the second storage units phi2S isolated from each other to be faced with the first region, and first and second transfer units phi1T and phi2T alternately arranged between the first region and the second region are formed on one main surface of one conductive type semiconductor substrate 1. The storage units phi1S and phi2S are displaced at 1/2 pitch in one direction with one another. When the transfer units phi1T and phi2T are regarded as a set, they are respectively commonly contacted with the corresponding storage units phi1S in the first region group, and are contacted with the adjacent storage unit phi2S in the second region group. Since the isolation region, e.g., channel stopper can be eliminated between the transfer units phi1T and phi2T according to this configuration, the widths of the transfer units and the storage units can be increased. |
