摘要 |
A method of forming combination CMOS field effect transistors optionally with a charge transfer device in a single substrate. Different resistivities in the P type wells of the substrate are formed by a combination of masks; a high energy low dosage ion implantation of impurity passes through one mask but not the other, and a low energy high dosage ion implantation of the impurity is stopped by both masks. A significant number of fabrication steps is thus saved, and the devices so fabricated are threshold and field voltage compatible.
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