| 发明名称 |
Device fabrication by plasma etching |
| 摘要 |
Etch rate in plasma-assisted etching is increased by inclusion of an additional oxidant. The oxidant increases consumption of unsaturates in the plasma to increase etchant species lifetime and to suppress polymer formation.
|
| 申请公布号 |
US4314875(A) |
申请公布日期 |
1982.02.09 |
| 申请号 |
US19800149470 |
申请日期 |
1980.05.13 |
| 申请人 |
BELL TELEPHONE LABORATORIES, INCORPORATED |
发明人 |
FLAMM, DANIEL L. |
| 分类号 |
H01L21/311;(IPC1-7):H01L21/30 |
主分类号 |
H01L21/311 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
