| 摘要 |
PURPOSE:To improve the static dielectric strength of an MOSIC, by arranging a metal contacting with the curved or bent part of the protective polycrystalline Si resistor formed on a semiconductor substrate through an insulating film. CONSTITUTION:A polycrystalline Si resistor 3 is formed on an Si substrate on which an MOS type device has been formed, through an insulating film. One end of the resistor 3 is connected to a metal electrode 1 for bonding through a connector 2, while other end is connected to an input protective circuit wiring 6 through a connector 5. Moreover, a metal 11 of Al and the like is contacted with the curved part of the polycrystalline Si resistor 3. Thus, the dielectric strength of the polycrystalline Si resistor itself is made approximately equal to that of a liner polycrystalline Si resistor in level, and the static dielectric strength of the MOSIC is improved without changing the layout and the manufacturing process of the circuit. |
