Electrically heated bonding tool for the manufacture of semiconductor devices

摘要

A heated bonding tool for the manufacture of semiconductor devices comprises a high density non-porous alumina body having a mounting portion at one end and a working portion at the other end. The working portion end is tapered and converges toward the working tip portion. An electrically conductive-resistive thick film is deposited over the outer surface of the tapered portion intermediate said mounting portion and said working tip portion which is capable of heating said working tip of said bonding tool up to 600 DEG C. Preferably the thick film material has a positive or negative temperature coefficient of resistance which permits the temperature of the working tip to be monitored as a function of the measured resistance of the thick film. An insulative heat resistant terminal block is provided with a pair of resilient leads connected to a power source. Cam means on the terminal block are adapted to move the resilient leads to permit release of the leads from engagement with thick film conductive leads deposited on the mounting portion of the bonding tool.