| 摘要 |
<p>PURPOSE:To obtain a semiconductor element with excellent resistance to heat and high-temperature electrical characteristics by using resin materials, as sealing agent, composed of one or more hardener of selected from Novolak-type epoxi resin, Novolak-type phenol resin and acid anhydride and an appropriate hardening catalyst. CONSTITUTION:A semicondutor device is sealed by means of a resin materials composed of three elements, which an Novolak-type epoxi resin of epoxi equivalent of 170-300, more than one kind of hardeners selected from Novolak-type phenol resin and acid anhydride and a hardening catalyst composed of bataine type adduct produced by addition reaction of a compound with pi bond with third organic phosphine, the semiconductor device is sealed. It is recommended to use phthal anhydride as acid anhydride, and carbon bisulfide, carbon biselenate and malein anhydride as hardening catalyst. If necessary, inorganic filling-up material such as quartz glass powder may be added.</p> |
