| 摘要 |
PURPOSE:To prevent disconnection when a wiring layer of metal thin film for a semiconductor integrated circuit is to be formed by a method wherein the metal thin film is formed preliminary only inside of an opening for terminal to reduce difference of the step part. CONSTITUTION:A resist mask 67 is applied to an SiO2 layer 63 on an si substrate 61 and the opening is formed, and the metal thin films 65, 68 are adhered on the whole surface. The opening 74 is buried with the metal thin film 75 by the lift off technique. The metal thin film is laminated thereon, and selective etching is performed to form the wiring layer 87. Accordingly because the opening for terminal is buried with the metal layer and step part is reduced, disconnection of wiring is reduced, and the device having high reliability can be obtained. |
