| 摘要 |
PURPOSE:To obtain a photovoltaic type infrared detector without any damage to a P-N junction, by a method wherein before forming impurities doped layer of reverse conductivity type on a substrate consisting of multiple semiconductors, a ZnS protective layer is formed in the region planned to form a doped layer, and impurity ions are injected therethrough. CONSTITUTION:An HgCdTe substrate 1 is preheated at about 150 deg.C to obtain good contactibility, a ZnS layer 2 is attached on the whole surface of the substrate 1, and a window H, is opened at the predetermined position. Then, while the substrate 1 is preheated, a ZnS film 3 is formed by CVD process on the whole surface of the substrate including the window H1, P-type impurity ions such as B are injected to form a P-type doped region 7 at the part of the substrate 1 corresponding to the window H1. The layer 3 is placed on the region 7 to form a window H2 and In is attached to the whole surface by evaporation. Next, patterning is carried out to from a lead wire 4 connecting with the region 7. While preheating the whole surface, the substrate is covered with a ZnS film 5, and other wires 6 are attached to both sides except for the light-receiving window W corresponding to the region 7. |
