| 摘要 |
PURPOSE:To contrive to unify etching speed of a plasma etching device by a method wherein the intervals between a sample electrode and facing electrodes are made as variable locally. CONSTITUTION:Electric field strength and density of reaction gas in the plasma etching device are compensated by regulating the distances between the sample electrode and the divided facing electrodes making supporting bars 12-14 of the divided facing electrodes 9-11 to move up and down by respectively independent driving mechanisms 15-17, and uniform etching speed can be obtained extending over the whole surface of a sample 4. By this constitution, yield can be enhanced without damaging characteristic of the semiconductor element. Plural modificatins of electrode structure can be considered. |
