| 摘要 |
PURPOSE:To simplify annealing of the reverse conductive layer of a semiconductor device by a method wherein ion implantation is performed selectively in a substrate through an insulating film to provide the reverse conductive layer, and an infrared laser beam is irradiated from the back of the substrate to heat the insulating film. CONSTITUTION:Ion implantation is performed on the P type Si substrate 1 through the gate oxide film 3 making a gate electrode 5 as a mask to form N type layers 6, 7. Then CO2 laser beam of 10.6mum wave length is irradiated from the back of the substrate 1 to heat the oxide film 3 through the substrate, and the adjoining N type layers 6, 7 are annealed by heat conduction. By this constitution, because the substrate is not heated on the whole, rediffusion of impurity in the N type layers 6, 7 is not generated, channel length in accordance with the design can be obtained easily, and annealing process can be simplified. After then it is covered with traditional PSG, and when an opening is formed and an electrode is provided, the device having favorable characteristic can be obtained. |
