| 摘要 |
PURPOSE:To prevent the production of any defect in a resist pattern owing to the influence of diffracted light in a proximity exposure method by changing the shape in the end part of the mask pattern of a photomask. CONSTITUTION:In exposure by an actual proximity exposure method by the influence of diffracted light, pattern defects are produced in the end part of a resist pattern by the influence of the diffracted light from three sides in the end part of a mask material. The test results indicate that, if the spacing between the photomask and a wafer is 10-20mum, the end part of the resist pattern which is ought to exist essentially is missing 1-2mum in the longitudinal direction in the positive type resist pattern by a mask material of 2mum linear width. This dictates that the shape of the positive type resist pattern obtained by the mask material of this mask pattern shape is a rectangular shape of A'ABB' (the black spotted part). |
