| 摘要 |
PURPOSE:To improve the durability and reliability of a photosensor by containing no elements of III-a group-aluminum group in the layer region of the side contacting with a photoconductive layer of an electrode layer contacted with the photoconductive layer. CONSTITUTION:A transparent pattern electrode 3 of SnO2 film is formed on a substrate 2, an N<+> type layer 4 is formed thereon, a photoconductive layer 5 made of amorphous material containing silicon as a base and at least one of hydrogen and halogen elements is formed on the overall surface, and an N<+> type layer 6 and aluminum layer 7 are further formed thereon. |
